Semiconductor interfaces
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United States of America Patent
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app pub date -
Apr 12, 2004
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Feb 28, 2003
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Abstract
The present invention relates generally to compositions and methods of improving the interface between a semiconductor material and a dielectric. One method provides for a method of improving the interface between a dielectric and a semiconductor material comprising the steps of preparing a passivated semiconductor surface using a valence-mending agent, depositing a precursor to a dielectric on the valence-mended semiconductor surface and oxidizing the precursor to a dielectric, wherein depositing and oxidizing do not damage the valence-mended semiconductor surface. The present invention also includes a semiconductor/dielectric interface with improved capacitance-voltage characteristics comprising a semiconductor substrate having at least one surface with one atomic layer of valence-mending atoms and a dielectric deposited on the semiconductor substrate.
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