Semiconductor device
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United States of America Patent
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Issued Date -
Dec 30, 2004
app pub date -
May 25, 2004
filing date -
May 28, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device including: a silicon pillar having a high-resistivity region and first and second highly doped regions sandwiching the high-resistivity region therebetween, the high-resistivity region having an impurity concentration of 10.sup.17 cm.sup.-3 or less; an insulator surrounding the high-resistivity region; and a conductor surrounding the insulator, wherein the conductor is made of a material which permits a voltage applied to the conductor to control an electric current flowing between the first and second highly doped regions and which has a work function bringing the high-resistivity region to a perfect depletion condition during the flow of the electric current between the first and second highly doped regions.
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