Methods and apparatus for electropolishing metal interconnections on semiconductor devices
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United States of America Patent
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N/A
Issued Date -
Dec 23, 2004
app pub date -
Jul 21, 2004
filing date -
Jul 9, 1998
priority date (Note) -
Abandoned
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Abstract
A metal layer formed on a surface of a wafer is electropolished using a wafer chuck and a moveable nozzle. The surface on which the metal layer is formed is the same surface on which features of devices are formed. The wafer chuck is configured to rotate the wafer when the wafer is placed on top of the wafer chuck. The moveable nozzle is disposed vertically above the wafer when the wafer is placed on top of the wafer chuck. The moveable nozzle is configured to move from a first position to apply a stream of electrolyte to a first portion of the metal layer to a second position to apply the stream of electrolyte to a second portion of the metal layer when the wafer is rotated by the wafer chuck, where the first and second portions of the metal layer are located at different radial positions on the wafer.
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