High power distributed feedback ridge waveguide laser
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United States of America Patent
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Issued Date -
Dec 16, 2004
app pub date -
Jul 12, 2004
filing date -
Jan 20, 2000
priority date (Note) -
Abandoned
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Abstract
A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 .mu.m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.
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