Method and apparatus for production of high purity silicon
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United States of America Patent
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Issued Date -
Dec 16, 2004
app pub date -
Dec 6, 2002
filing date -
May 16, 2000
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Abandoned
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Abstract
High purity silicon usable for production of solar cells is easily produced with high production efficiency. In a rotary chamber (50) made of quartz, which is evacuated and filled with an hydrogen-argon atmosphere containing SiF.sub.4, a plasma area (60) is generated by supplying electric power from a coil (51) to decompose SiF.sub.4 and produce silicon as being fine powder particles. Fine particles of seed silicon (Si) in the rotating reaction chamber are picked up and transported upward by weirs (52), and then they can fall by gravity into the plasma area where silicon elements produced by decomposition of SiF.sub.4 are deposited onto surfaces of the silicon fine particles.
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