Method of forming fine pattern

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United States of America Patent

APP PUB NO 20040248042A1
SERIAL NO

10491619

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There is provided a method of forming, on a substrate, a fine resist pattern comprising a step for forming a photosensitive layer by using a photo-sensitive composition comprising at least a compound generating an acid by irradiation of light and a fluorine-containing polymer, in which the fluorine-containing polymer is represented by the formula (1): -(M1)-(M2)-(A1)- (1) wherein the structural unit M1 is a structural unit derived from a fluorine-containing monomer, in which at least one fluorine atom is bonded to any of carbon atoms forming the polymer trunk chain, the structural unit M2 is a structural unit having an aliphatic ring structure in the polymer trunk chain, the structural unit A1 is a structural unit derived from a monomer copolymerizable with the monomers to introduce the structural units M1 and M2, provided that at least any one of the structural units M1, M2 and A1 has an acid-reactive functional group Y, and contents of the structural units M1, M2 and A1 are from 1 to 99% by mole, from 1 to 99% by mole and from 0 to 98% by mole, respectively, and the polymer satisfies Equation (X): N.sub.T/(N.sub.C-N.sub.O+4N.sub.F.sup.-2).ltoreq.2.0, wherein N.sub.T is a compositional average number of whole atoms constituting the fluorine-containing polymer, N.sub.C is a compositional average number of carbon atoms, N.sub.O is a compositional average number of oxygen atoms and N.sub.F is a compositional average number of fluorine atoms bonded to carbon atoms of the polymer trunk chain and bonded to carbon atoms forming an aliphatic ring structure among fluorine atoms which constitute the fluorine-containing polymer. In the method of forming a fine pattern, the photosensitive composition having high practicality and prepared using a material having high transparency against exposure light having a short wavelength such as F.sub.2 laser beam is used as a resist.

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Patent Owner(s)

Patent OwnerAddress
DAIKIN INDUSTRIES LTDUMEDA CENTER BUILDING 4-12 NAKAZAKI-NISHI 2-CHOME KITA-KU OSAKA-SHI OSAKA 530-8323
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INCTSUKUBA-SHI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Araki, Takayuki Settsu-shi, JP 113 1215
Ishikawa, Takuji Settsu-shi, JP 29 346
Itani, Toshiro Tsukuba-shi, JP 8 45
Koh, Meiten Settsu-shi, JP 88 816
Toriumi, Minoru Tokyo, JP 11 282
Watanabe, Hiroyuki Tsukuba-shi, JP 670 6656
Yamazaki, Tamio Tsukuba-shi, JP 3 11

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