Importance

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Abstract

Embodiments of the present invention are directed toward cleaning semiconductor substrates by dividing a processing chamber into a high-pressure compartment and a low-pressure compartment using a baffle. The baffle may include a pattern of nozzles that provide a flow path between the high pressure compartment and the low pressure compartment and that maintain the two compartments at substantially different pressures. A ratable substrate support is positioned within the low pressure compartment, and an inlet port injects a cleaning mist and a carrier gas into the high pressure compartment. The pressure differential between the two compartments accelerates the droplets from the cleaning mist through the nozzles of the baffle into the low pressure compartment toward the substrate, where a portion of the cleaning mist impacts on the surface of the substrate to form a liquid film or to eject elements of the surface film on the wafer. The substrate support is configured to rotate the substrate such that the liquid film flows radially across the substrate. There may be an independent source of vapor of the same or different type as the mist which is introduced into the low pressure region and provides for liquid condensation on the wafer. This helps replace the liquid lost by splashing or centrifugal flow off the wafer edge. Waste products from micro features on the substrate diffuse into the liquid film, where portions of the liquid film and diffused waste products are eventually radially propelled off the edge of the substrate to be collected as waste or splashed off. Embodiments of the present invention are capable of cleaning a substrate with a significantly reduced volume of liquid relative to a conventional liquid bath.

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First Claim