Method of forming fine pattern
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United States of America Patent
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N/A
Issued Date -
Nov 25, 2004
app pub date -
Jan 8, 2004
filing date -
Jul 12, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
There is provided a method of forming a fine resist pattern in which a highly practicable photosensitive composition obtained from a material having a high transparency against an exposure light having a short wavelength such as F.sub.2 excimer laser beam is used as a resist. The method of forming a fine resist pattern comprises, in order, a step for forming a photosensitive layer on a substrate or on a given layer on the substrate using a photosensitive composition comprising at least a compound generating an acid by irradiation of light and a fluorine-containing polymer comprising a norbornene derivative unit having OH group or a functional group which can be converted to OH group by an acid, a step for exposing by selectively irradiating the given area of said photosensitive layer with energy ray, a step for heat-treating the exposed photosensitive layer, and a step for forming a fine pattern by developing the heat-treated photosensitive layer to selectively remove an exposed portion or an un-exposed portion of the photosensitive layer.
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