Semiconductor laser cladding layers
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United States of America Patent
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Issued Date -
Nov 11, 2004
app pub date -
May 7, 2004
filing date -
May 8, 2003
priority date (Note) -
Abandoned
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Abstract
Cladding layers for semiconductor lasers provide improved heat transfer and optical confinement properties. The cladding layers may comprise superlattices such as AlSb/GaAs, AlSb/AlAs, AlSb/GaSb/AlAs, AlGaSb/AlGaAs and AlSb/AlGaAs. The cladding layers may also comprise Al-As-Sb ternary alloys or Al-Ga-As-Sb quaternary alloys. Such cladding layers may be used in interband cascade lasers or other types of semiconductor lasers to significantly increase heat flow out of the active light-emitting region of the device, while providing improved optical confinement characteristics.
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