Method of deposting a dielectric film
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United States of America Patent
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Issued Date -
Nov 4, 2004
app pub date -
Jan 27, 2004
filing date -
Jul 28, 2001
priority date (Note) -
Abandoned
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Abstract
This invention relates to a method of depositing a dielectric film on a substrate surface having metal lines thereon with at least some spacings between 4 .mu.m and 20 .mu.m including reacting at least one silane containing gas and at least one of oxygen or an oxygen containing gas in a chamber to form a film on the surface of the substrate within the chamber wherein the chamber pressure is below 850 mT and wherein spaces between the metal lines are at least substantially filled by the film.
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