Chemical mechanical polishing slurry
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United States of America Patent
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Issued Date -
Nov 4, 2004
app pub date -
Feb 13, 2004
filing date -
Feb 25, 2003
priority date (Note) -
Abandoned
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Abstract
This invention relates to a chemical mechanical polishing slurry comprising polishing grains, ammonium nitrate as an oxidizing agent, 1,2,4-triazole as a polishing promoter for a copper metal film and water and having a pH within a range of 3 to 4. The polishing slurry is suitable for forming a damascene copper-based metal interconnection comprising a tantalumr-based metal as a barrier metal film material.
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