Process for producing thin film transistor
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United States of America Patent
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app pub date -
Apr 30, 2004
filing date -
Oct 2, 2002
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Abandoned
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Abstract
In a process for forming a thin film transistor, a gate insulator layer is formed on a semiconductor layer. A gate structure is formed on the gate insulator layer, and source/drain structures are formed in the semiconductor layer. The source/drain structures are spaced from each other by a channel region. A first kind of doping material is injected into a first end portion of the channel region in a first direction of a first angle from a surface of the semiconductor layer to form a first LDD structure, and a second kind of doping material is injected into the first end portion of the channel region in a second direction of a second angle from the surface of the semiconductor layer to form a first halo structure in contact with the first LDD structure.
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