Multi-gate heterostructured field effect transistor
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United States of America Patent
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Issued Date -
Oct 7, 2004
app pub date -
Dec 5, 2003
filing date -
Dec 5, 2002
priority date (Note) -
Abandoned
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Abstract
A heterostructured field effect transistor has a multi-gate configuration, in which the gate voltages are individually biased to tailor the potential field. The multi-gate configuration can be a two-, three-, or four-gate configuration. The transconductance of the transistor can be substantially linear over a range of gate voltages.
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