Method of depositing aluminium nitride
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United States of America Patent
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Issued Date -
Sep 30, 2004
app pub date -
Jan 7, 2004
filing date -
Jul 7, 2001
priority date (Note) -
Abandoned
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Abstract
A method of depositing crystallographically orientated aluminium nitride. Aluminium nitride is sputter deposited from a target on a workpiece maintained on a biased platen. The sputter gas is or includes krypton or xenon. The bias to the platen is selected to give a substantially flat XRD FWHM profile across the wafer and a stress in the film of less than or equal to .+-.5E10-8 dynes per cm.sup.2.
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