Method for producing a copper connection
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United States of America Patent
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N/A
Issued Date -
Sep 16, 2004
app pub date -
Jan 7, 2004
filing date -
Jul 14, 2001
priority date (Note) -
Abandoned
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Abstract
A method of forming a conductive interconnect in a semiconductor structure. The method involves forming a via or trench through an interlayer dielectric to lie above prior metallisation. The base of the via or trench is sputter etch cleaned to expose a conductive surface of the prior metallisation. The via or trench is then filled with metal. Prior to the sputter etch step, the surface of the wall or walls of the via or trench are chemically modified to form a surface resistant to metal penetration.
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