Photodiode and image sensor
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United States of America Patent
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Issued Date -
Sep 9, 2004
app pub date -
Dec 24, 2003
filing date -
Dec 25, 2002
priority date (Note) -
Abandoned
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Abstract
The invention provides a technology capable of preventing an excessive leak current in a pn junction of a photodiode. The n-type region of a photodiode is separated from a device isolating part and a p-type region of relatively high concentration is formed in such a way as to be in contact with the n-type region to reduce the effect which an interface state between the semiconductor substrate and the device isolating part or a stress caused by the crystal mismatching of a silicon single crystal constructing the semiconductor substrate produces on a depletion layer produced in the boundary between the n-type region and the p-type region of the photodiode, thereby reducing the leak current in the pn junction of the photodiode.
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