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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
ED GEISTLICH SOEHNE AG	FUER CHEMISCHE INDUSTRIE BAHNHOFSTRASSE 40 P O BOX 157 CH-6110 WOLHUSEN

International Classification(s)

• A61B:DIAGNOSIS; SURGERY; IDENTIFICATION

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Geistlich, Peter	Stansstad, CH	35	1369
# of filed Patents : 35 Total Citations : 1369
Schloesser, Lothar	Darmstadt, DE	21	662
# of filed Patents : 21 Total Citations : 662
Spector, Myron	Brookline, MA	17	807
# of filed Patents : 17 Total Citations : 807

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Patent Citation Ranking

• 14 Citation Count
• A61B Class

• 23.55 % this patent is cited more than
• 21 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2018/0033,684

ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT

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Abstract

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Some embodiments relate to a semiconductor device manufacturing process. In the process, a substrate is provided, and a sacrificial layer is formed over the substrate. An opening is patterned through the sacrificial layer, and the opening is filled with conductive material. The sacrificial layer is removed while the conductive material is left in place. A first dielectric layer is formed along sidewalls of the conductive material that was left in place.

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Description

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Claims

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