Method for fabricating a wafer including dry etching the edge of the wafer
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United States of America Patent
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Issued Date -
Aug 12, 2004
app pub date -
Feb 10, 2003
filing date -
Feb 10, 2003
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a wafer including an improved method for processing the edge of a wafer that utilizes dry etching techniques is provided. In this regard, the profile of the edge of the wafer may initially be defined, such as by rounding or chamfering the edge of the wafer. The wafer edge may then be dry etched, such as by atmospheric downstream plasma (ADP) etching, chemical downstream etching (CDE) or the like, in order to smooth the edge of the wafer while eliminating, or reducing, the use of wet chemical etchants. In addition, one or both major surfaces of the wafer may be dry etched, also with ADP etching or CDE, to further reduce the use of wet chemical etchants. Wafers fabricated according to this method are also provided.
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