Group III nitride semiconductor film and its production method
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United States of America Patent
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Issued Date -
Aug 12, 2004
app pub date -
Apr 1, 2004
filing date -
Aug 1, 2001
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Abandoned
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Abstract
A group III nitride semiconductor film involving few lattice defects and having a large thickness, and a process for making the film are disclosed. Dry-etching is conducted while a quartz substrate and a group III nitride semiconductor are placed on the top of a lower electrode. Nano-pillars (50) are formed on the top of the group III nitride semiconductor (101). Another group III nitride semiconductor film (51) is deposited on the nano-pillars (50).
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