Semiconductor device having a Cu interconnection and method for manufacturing the same
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United States of America Patent
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Issued Date -
Aug 5, 2004
app pub date -
Jan 22, 2004
filing date -
Jan 24, 2003
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Abstract
A Cu interconnection in a semiconductor device has an ununiform profile of additive metal atoms wherein the additive metal atoms are rich in the vicinities of bottom and side surfaces of the Cu interconnection. The Cu interconnection also has an ununiform silicon profile wherein additive silicon atoms are rich in the vicinity of the top surface of the Cu interconnection. The structure improves the electro-migration resistance and the stress-migration resistance of the Cu interconnection.
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