Method of fabricating a semiconductor device utilizing a catalyst material solution
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United States of America Patent
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Mar 6, 2007
Issued Date -
N/A
app pub date -
Jan 8, 2004
filing date -
Aug 26, 1994
priority date (Note) -
Expired
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Abstract
A very thin oxide film is formed on an amorphous silicon film that is formed on a glass substrate, and an aqueous solution such as an acetate solution added with a catalyst element such as nickel by 10 to 200 ppm (adjustment needed) is dropped thereon. After the structure is held in this state for a predetermined period, spin drying is performed by using a spinner. A crystalline silicon film is obtained by subjecting the structure to a heat treatment of 550.degree. C. and 4 hours and then to laser light irradiation. A crystalline silicon film having a smaller defect concentration is obtained by further performing a heat treatment of 550.degree. C. and 4 hours.
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