Corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces
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United States of America Patent
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Issued Date -
Jul 8, 2004
app pub date -
Oct 14, 2003
filing date -
Oct 24, 2001
priority date (Note) -
Abandoned
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Abstract
The present invention provides a slurry for chemical mechanical polishing (CMP) a metal surface of a semiconductor substrate with a polyurethane-free thermoplastic foam polishing body. The slurry includes an abrasive particle stabilizer and an acid buffer that maintains the slurry at a pH between about 2.5 and about 4.0 during polishing of a metal surface on a semiconductor substrate. In yet another embodiment, the present invention provides a CMP polishing system. The polishing system comprises a slurry that maintains a pH between about 1 and about 6 during polishing of a metal surface on a semiconductor substrate. The system further includes a polishing pad that includes a polishing body having a polyurethane-free thermoplastic foam substrate that cooperates with the slurry to remove portions of the metal surface during said polishing.
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