METHOD OF FORMING A THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY
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United States of America Patent
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Issued Date -
Jul 8, 2004
app pub date -
Mar 20, 2003
filing date -
Jan 3, 2003
priority date (Note) -
Abandoned
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Abstract
A gate insulating (GI) layer, an amorphous silicon layer, and a metal layer are sequentially formed on a gate formed on a substrate of a thin film transistor liquid crystal display (TFT LCD). A first photoresist layer and a second photoresist layer with an opening are then sequentially formed on the metal layer. Two etching processes are performed to form a source and a drain of the TFT LCD thereafter. Finally, a passivation layer is formed to cover the substrate.
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