Electroless deposition of cu-in-ga-se film
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United States of America Patent
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Issued Date -
Jul 8, 2004
app pub date -
Jun 17, 2003
filing date -
Mar 22, 2001
priority date (Note) -
Abandoned
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Abstract
A process for depositing copper-indium-gallium-selenide thin films on substrates, including foreign substrates, occurs in a chemical bath that includes a buffer solution and does not require external current as a catalyst. Formation of the chemical bath includes compounds of each of the constituent elements dissolved in deionized water and the addition of pHydrion buffers likewise dissolved. Deposition occurs as a result of the introduction of both a working electrode and a counter electrode. The deposited thin film is further processed through physical vapor deposition of additional indium, gallium, and selenium in order to fine-tune the stoichiometry of the resultant thin film.
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