Trench capacitor process for preventing parasitic leakage
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United States of America Patent
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Issued Date -
Jul 8, 2004
app pub date -
Apr 2, 2003
filing date -
Jan 8, 2003
priority date (Note) -
Abandoned
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Abstract
A trench capacitor process for preventing parasitic leakage. The process is capable of blocking leakage current from a parasitic transistor adjacent to the trench, and includes forming a doping layer and a cap layer covering on part of the sidewall of the trench and performing an annealing process on the doping layer and forming a dopant region in the substrate adjacent to the sidewall of the trench, blocking leakage current from a parasitic transistor adjacent to the trench.
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