Method of forming non-oxide thin films using negative sputter ion beam source
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United States of America Patent
Stats
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N/A
Issued Date -
Jul 8, 2004
app pub date -
Oct 29, 2003
filing date -
Nov 21, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of forming an non-oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an inert gas into the process chamber, ionizing the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the non-oxide thin film on the substrate from the negatively charged ions.
First Claim
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