Method of fabricating an aluminum nitride (A1N) substrate
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United States of America Patent
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Issued Date -
Jul 1, 2004
app pub date -
Sep 15, 2003
filing date -
Sep 26, 2002
priority date (Note) -
Abandoned
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Abstract
A method of fabricating an aluminum nitride (AlN) substrate, wherein the substrate is obtained by spraying a powder onto a support at a high temperature and at a high speed, the powder including AlN grains covered with a layer of an oxide precursor chosen from oxide precursors yielding an oxide forming a liquid phase around the AlN grains during spraying.
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