Palsma etchingm method
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United States of America Patent
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Issued Date -
Jul 1, 2004
app pub date -
Apr 22, 2003
filing date -
Dec 27, 2002
priority date (Note) -
Abandoned
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Abstract
A plasma etching method for etching a substrate having a resin layer and an opening in an outer copper layer covering the resin layer is disclosed to include the step of contacting the outer surface of the copper layer with a chemical substance capable of making oxidation reaction with copper so as to form an oxide layer on the outer surface of the copper layer, and the step of employing a plasma etching technique of using a gas containing oxygen to form plasma to remove resin material from the resin layer corresponding to the opening of the copper layer.
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