Ferroelectric resistor non-volatile memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 27, 2004
app pub date -
Nov 26, 2002
filing date -
Nov 26, 2002
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method of fabricating a ferroelectric thin film resistor includes preparing a substrate; depositing a bottom electrode; depositing a layer of ferroelectric material; depositing a top electrode; and completing the resistor; wherein, the ferroelectric resistor is programmed using a programming voltage; and wherein the ferroelectric resistor is non-destructively read by a sensing method taken from the group of sensing methods consisting of constant voltage sensing and constant current sensing.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully