Method of forming oxide thin films using negative sputter ion beam source
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United States of America Patent
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Issued Date -
May 27, 2004
app pub date -
Nov 21, 2002
filing date -
Nov 21, 2002
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Abandoned
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Abstract
A method of forming an oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an oxygen gas and an inert gas into the process chamber, ionizing the oxygen gas and the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the oxide thin film on the substrate from the negatively charged ions reacted with the ionized oxygen gas.
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