Siloxane-based resin and method of forming an insulating film between interconnect layers of a semiconductor device using the same
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United States of America Patent
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Jun 21, 2005
Grant Date -
May 20, 2004
app pub date -
Oct 16, 2003
filing date -
Oct 31, 2002
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Abstract
Disclosed herein is a siloxane-based resin prepared by hydrolyzing and polycondensing a cyclic siloxane compound, a silane compound having three hydrolysable functional groups and a silane compound having three hydrolysable functional groups and one heat-labile functional group, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein is a method of forming an insulating film between interconnect layers of a semiconductor device using the siloxane-based resin thus prepared, whereby an insulating film having low dielectric constant as well as excellent mechanical properties can be obtained.
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