Chemical mechanical polishing composition and method
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United States of America Patent
Stats
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N/A
Issued Date -
May 13, 2004
app pub date -
Nov 12, 2002
filing date -
Nov 12, 2002
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A chemical mechanical polishing (CMP) formulation and method for using the same. The composition is useful for polishing semiconductor substrates, and particularly substrate surfaces containing copper, tungsten, or alloys of the same. The CMP formulation may contain a copolymer enhancement agent such as a Pluronics.RTM. compound, and/or a vesicle encapsulating agent, as well as an active agent that is chemically reactive with the substrate to enhance polishing performance. The active agent may be a bifunctional compound that is capable of functioning as both a passivating agent and a complexing agent to achieve an optimum rate of passivation and oxidation on the substrate surface. An active agent can also take the form of an oxidation activator, such as a metal ion, encapsulated in a vesicle or micelle, that is released with applied pressure to accelerate the removal process and improve planarization efficiency.
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Patent Citation Ranking
- 23 Citation Count
- C09K Class
- 85.11 % this patent is cited more than
- 21 Age