Precursor for chemical vapor deposition and thin film formation process using the same
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United States of America Patent
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Nov 5, 2002
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Nov 5, 2002
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Abstract
A precursor for chemical vapor deposition comprising a metal compound represented by formula (I): 1 wherein a plurality of R's, which may be the same or different, each represent an alkyl group having 1 to 8 carbon atoms; and M represents a metallic element selected from the group consisting of titanium, germanium, zirconium, tin, hafnium, and lead.
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