Biomedical ion sensitive semiconductor sensor and sensor array
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United States of America Patent
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Issued Date -
Apr 29, 2004
app pub date -
Oct 25, 2002
filing date -
Oct 25, 2002
priority date (Note) -
Abandoned
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Abstract
A biomedical ion sensitive sensor for sensing an ion concentration of a biomedicine sample includes an insulation layer formed on a substrate having a source region and a drain region. A gate oxide layer formed on the surface of the source region, the drain region, and the insulation layer. A chemical membrane layer is formed on the gate oxide layer. A concave ion sensitive portion is formed at an area of the surface of the chemical membrane layer defined between the source region and the drain region, and a rough surface is further formed on the ion sensitive portion. The ion sensitive film is made of Si.sub.3N.sub.4, SiO.sub.2, Al.sub.2O.sub.3, Ta.sub.2O.sub.5, SnO.sub.2, ZrO.sub.2, or HfO.sub.2. A plurality of biomedical ion sensitive semiconductor sensors are communicated with reactant micro-fluid channels to form a biomedical ion sensitive semiconductor sensor array.
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