Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 22, 2004
app pub date -
Oct 18, 2002
filing date -
Oct 18, 2002
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor device includes a heavily doped first layer of a first conductivity type having a bulk portion and a mesa portion disposed above the bulk portion. A second layer of a second conductivity type is deposited on the mesa portion of the first layer to form a p-n junction therewith. The second layer is more lightly doped than the first layer. A contact layer of the second conductivity type is formed on the second layer. First and second electrodes electrically contact the bulk portion of the first layer and the contact layer, respectively.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully