Surface preparation using plasma for ALD Films
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Aug 15, 2003
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Aug 15, 2002
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Abstract
An exemplary method for depositing a layer on a surface of a dielectric layer where the dielectric layer contains an organic material comprises exposing the surface of the dielectric layer to a substance, such as a substance containing nitrogen. This exposure modifies, at least, the exposed surface of the dielectric layer. The method further includes depositing a layer, such as a barrier layer, using an atomic layer deposition process on the exposed surface of the dielectric layer. In certain embodiments, exposure of the wafer to the substance containing nitrogen result in a first region of the dielectric having a first concentration of nitrogen incorporated and a second region having a second amount of nitrogen incorporated in the dielectric layer, the second concentration being higher greater than the first concentration.
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