Epitaxial silicon wafer
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United States of America Patent
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app pub date -
Oct 3, 2003
filing date -
Aug 27, 1999
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Abandoned
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Abstract
An epitaxial silicon wafer which comprises a silicon wafer produced by a method characterized as comprising pulling up a silicon single crystal under a condition wherein when an oxygen concentration is 7.times.10.sup.17 atoms/cm.sup.3 a nitrogen concentration is about 3.times.10.sup.15 atoms/cm.sup.3 or less, and when an oxygen concentration is 1.6.times.10.sup.18 atoms/cm.sup.3 a nitrogen concentration is about 3.times.10.sup.14 atoms/cm.sup.3 or less, and, an epitaxial film formed on the wafer. The epitaxial film, being formed on such a wafer, has crystal defects, which are observed as LPD of 120 nm or more on the epitaxial film, in a range of 20 pieces/200-mm wafer or less. The epitaxial silicon wafer contains nitrogen atoms doped therein and also has satisfactory characteristics as that for use in a semiconductor device.
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