Method for inductor trimming of the high frequency integrated passive devices

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United States of America Patent

APP PUB NO 20040063039A1
SERIAL NO

10464495

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Abstract

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Disclosed herein is a method for inductor An Improved Structure For the Endpiece of Tape Rule of the high frequency integrated passive devices in which a spiral inductor pattern is formed on an insulation substrate, the spiral inductor pattern is spirally coiled outwards from the center. A thick film dielectric layer made of bisbenzocyclobutene (BCB) is formed on the spiral inductor pattern. A metal layer can be formed according to under bump metallization technique (UBM). The metal layer is either formed into a continuous spirally coiled form or a spread discrete configuration. With this structure, laser trimming can be applied to the metal layer pattern so as to acquire an ideal inductance value, thereby achieving wafer level trimming and compensating the process tolerance.

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Patent OwnerAddress
ASIA PACIFIC MICROSYSTEMS INCNO 2 R & D RD VI SCIENCE-BASED INDUSTRIAL PARK HSINCHU BAOSHAN VILLAGE HSINCHU HSIEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chun-Hsien Hsinchu, TW 49 579
Liang, Shang-Yu Hsinchu, TW 2 8
Lin, Chung-Hsien Hsinchu, TW 82 1467
Tsai, Shu-Hui Hsinchu, TW 12 317

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