Devices without current crowding effect at the finger's ends
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United States of America Patent
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Issued Date -
Mar 18, 2004
app pub date -
Jun 23, 2003
filing date -
Sep 18, 2002
priority date (Note) -
Abandoned
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Abstract
ESD protection devices without current crowding effect at the finger's ends. It is applied under MM ESD stress in sub-quarter-micron CMOS technology. The ESD discharging current path in the NMOS or PMOS device structure is changed by the proposed new structures, therefore the MM ESD level of the NMOS and PMOS can be significantly improved. In this invention, 6 kinds of new structures are provided. The current crowding problem can be successfully solved, and have a higher MM ESD robustness. Moreover, these novel devices will not degrade the HBM ESD level and are widely used in ESD protection circuits.
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