Apparatus and method of forming thin film from negatively charged sputtered ions
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United States of America Patent
Stats
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N/A
Issued Date -
Mar 11, 2004
app pub date -
Sep 5, 2002
filing date -
Sep 5, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention discloses an apparatus and a method of forming a thin film from negatively charged sputtered ions. More specifically, a sputter deposition apparatus for forming a thin film on a substrate includes at least one sputter target comprised of a material for the thin film, an ion gun emitting a neutralized ion beam towards the sputter target, a sputter gas source supplying a sputter gas into the ion gun, and a cesium vapor emitter inducing a plurality of negatively ionized sputtered particles from the sputter target and located in close proximity to the sputter target to introduce cesium vapor onto a reaction surface, wherein the cesium vapor emitter includes a feeding manifold having a plurality of apertures therein, a reservoir coupled to the feeding manifold and filled with a cesium slurry, and an on/off valve controlling an amount of the cesium vapor from the reservoir.
First Claim
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