Method for fabricating light emitting diode with transparent substrate

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United States of America Patent

APP PUB NO 20040043524A1
SERIAL NO

10443584

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Abstract

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A method for fabricating a light emitting diode with transparent substrate. The method comprises forming a first type cladding layer on a substrate, forming an active layer on the first type cladding layer, forming a second type cladding layer on the active layer, forming a second type transparent semiconductor layer on the second type cladding layer to serve as the transparent substrate, removing the substrate, and forming a first type contact layer on the surface of the first type cladding layer previously connected to the substrate. The transparent substrate does not absorb the emitted light, thereby the light emitting efficiency is increased by as much as double, and thus the performance of opto-electronic devices is improved.

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Patent Owner(s)

Patent OwnerAddress
ARIMA OPTOELECTRONICS CORP7F NO 349 SEC 2 RENHE ROAD DASHI TAOYUAN COUNTY R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Wen-Chieh Taipei, TW 15 290
Lu, Chi-Wei Taipei, TW 6 155
Tseng, Wen-Huang Taipei, TW 4 51

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