Chemical vapor deposition reactor and method for utilizing vapor vortex
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 12, 2004
app pub date -
Dec 4, 2002
filing date -
Oct 16, 2000
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A chemical vapor deposition (CVD) reactor comprising: a reactor chamber; a substrate holder located within the reactor chamber; a gas inlet system arranged to provide a gas flow rotating above the substrate holder; and a gas exhaust. The flow characteristics of the precursor gas are controlled to equalize the thin film thickness across the substrate surface by forcing the gas into a smaller volume as it moves across the substrate. With a central exhaust, this is done by reducing the height of the reactor chamber with increasing proximity to the center of the reactor chamber so that the reactor volume per unit distance decreases as the gas moves from the inlet to the exhaust.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully