Resist pattern formation method
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United States of America Patent
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Issued Date -
Jan 29, 2004
app pub date -
Jan 2, 2003
filing date -
Jul 23, 2002
priority date (Note) -
Abandoned
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Abstract
A resist pattern formation method is characterized in that, after a resist pattern is formed on a wafer, a residue generated between resist sidewalls forming the resist pattern is irradiated with an electron beam under a reduced pressure. It is also preferable to detect the residue with pattern defect inspection equipment, and irradiate the detected residue site with an electron beam under a reduced pressure using an electron microscope. The reduced pressure is preferably equal to or lower than 5.0.times.10.sup.2 Pa, and an acceleration voltage is preferably equal to or lower than 1200 V. A manufacturing method of a semiconductor device according to the present invention uses the above-described formation method to form a resist pattern. Thus, the residue generated between resist sidewalls can be removed without varying a dimension of a resist pattern spacing.
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