Confinement layer of buried heterostructure semiconductor laser
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Issued Date -
Jan 22, 2004
app pub date -
Dec 14, 2001
filing date -
Dec 15, 2000
priority date (Note) -
Abandoned
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Abstract
A laser device having an improved electrical confinement has been disclosed The confinement of laser is composed of a material of AlInAs doped with oxygen. Also, it may further comprise aluminum oxide (Al.sub.2O.sub.3), which may take the form of an aluminum oxide (Al.sub.2O.sub.3) layer formed along the interface between the confinement and neighboring components of the device.
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