Temperature-adjusted pre-charged reference for an integrated circuit 1T/1C ferroelectric memory
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United States of America Patent
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Issued Date -
Dec 11, 2003
app pub date -
Jun 5, 2002
filing date -
Jun 5, 2002
priority date (Note) -
Abandoned
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Abstract
A temperature-dependent reference works by pre-charging a standard linear CMOS or ferroelectric reference capacitor to a pre-charge voltage that is dependent on temperature. At cold temperatures the pre-charge voltage is higher, resulting in a larger voltage on the reference bit-line. At warm temperatures the pre-charge voltage is lower, resulting in a smaller voltage on the reference bit-line. Both the precise temperature slope and offset pre-charge voltage are selectable.
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