Temperature-adjusted pre-charged reference for an integrated circuit 1T/1C ferroelectric memory

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United States of America Patent

APP PUB NO 20030227809A1
SERIAL NO

10163323

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Abstract

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A temperature-dependent reference works by pre-charging a standard linear CMOS or ferroelectric reference capacitor to a pre-charge voltage that is dependent on temperature. At cold temperatures the pre-charge voltage is higher, resulting in a larger voltage on the reference bit-line. At warm temperatures the pre-charge voltage is lower, resulting in a smaller voltage on the reference bit-line. Both the precise temperature slope and offset pre-charge voltage are selectable.

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Patent Owner(s)

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RAMTRON INTERNATIONAL CORPORATION1850 RAMTRON DRIVE COLORADO SPRINGS CO 80921

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Inventor Name Address # of filed Patents Total Citations
Schwartz, Kurt S Woodland Park, CO 3 19

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  • 8 Citation Count
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges82141226948282214629601 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0102030405060708090100110120130140150160170180190200210220230

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