Temperature-adjusted pre-charged reference for an integrated circuit 1T/1C ferroelectric memory
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United States of America Patent
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N/A
Issued Date -
Dec 11, 2003
app pub date -
Jun 5, 2002
filing date -
Jun 5, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A temperature-dependent reference works by pre-charging a standard linear CMOS or ferroelectric reference capacitor to a pre-charge voltage that is dependent on temperature. At cold temperatures the pre-charge voltage is higher, resulting in a larger voltage on the reference bit-line. At warm temperatures the pre-charge voltage is lower, resulting in a smaller voltage on the reference bit-line. Both the precise temperature slope and offset pre-charge voltage are selectable.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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RAMTRON INTERNATIONAL CORPORATION | 1850 RAMTRON DRIVE COLORADO SPRINGS CO 80921 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Schwartz, Kurt S | Woodland Park, CO | 3 | 19 |
# of filed Patents : 3 Total Citations : 19 |
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Patent Citation Ranking
- 8 Citation Count
- G11C Class
- 1.46 % this patent is cited more than
- 22 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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