In-situ thermal chamber cleaning
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United States of America Patent
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Issued Date -
Nov 20, 2003
app pub date -
Dec 12, 2002
filing date -
May 8, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A cost-effective and environmentally benign cleaning method is provided which comprises introducing an etch gas into the chamber, performing a first cleaning process to remove the deposited materials at a high rate, and performing a second cleaning process to remove the deposited materials at a high etch selectivity with respect to the materials forming the chamber. The first cleaning process is performed at a first pressure, the second cleaning process is performed at a second pressure. The second pressure is substantially lower than the first pressure to enhance the etching selectivity.
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