Light-emitting gallium nitride-based compound semiconductor device
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United States of America Patent
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Issued Date -
Nov 20, 2003
app pub date -
Jun 9, 2003
filing date -
Nov 20, 1992
priority date (Note) -
Abandoned
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Abstract
A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.xGa.sub.1-xN (0
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