Method of producing SI-GE base semiconductor devices
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United States of America Patent
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Issued Date -
Oct 23, 2003
app pub date -
Dec 23, 2002
filing date -
Jan 27, 2000
priority date (Note) -
Abandoned
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Abstract
Disclosed is a method of producing elementary semiconductor devices such as a field-effect transistor, a capacitor, a resistor, an inductor, a transformer, or a diode, and devices produced by said method. According to the method, a semiconductor seed layer is applied to a substrate having regions of exposed semiconductor material and regions of exposed dielectric material. The method comprises a step of disposing the substrate in a growth chamber and nucleating the seed layer by exposing the semiconductor material and dielectric material to an atmosphere of gases presented at a predetermined flow rate, temperature and pressure selected to provide contiguous growth of the seed layer, the seed layer growing in a single crystal lattice over predetermined windows within the mixed topology substrate.
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