Silicon nitride film forming apparatus and film forming method
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United States of America Patent
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Issued Date -
Oct 23, 2003
app pub date -
Apr 22, 2003
filing date -
Apr 22, 2002
priority date (Note) -
Abandoned
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Abstract
The present invention is to provide a silicon nitride film forming apparatus and a forming method which makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming apparatus and forming method in which a heating element and a substrate are arranged in a vacuum vessel connected to a gas exhaust system and a gas supply system to deposit a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system, comprises: an inner wall which is arranged in the vacuum vessel surrounding the heating element and the substrate so as to form a film formation space, a gas introduction means to introduce the raw material gas to the film forming space, and at least one of a heating means and a cooling means of the inner wall arranged to control the inner wall to a predetermined temperature.
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