Nanowire devices and methods of fabrication
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United States of America Patent
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Issued Date -
Oct 9, 2003
app pub date -
Apr 5, 2002
filing date -
Apr 5, 2002
priority date (Note) -
Abandoned
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Abstract
Nanowire devices are provided based on carbon nanotubes or single-crystal semiconductor nanowires. The nanowire devices may be formed on a silicon substrate or other suitable substrate. Electrodes may be patterned on the substrate. Catalyst sites may be formed on the electrodes prior to nanowire growth. Chemical vapor deposition techniques may be used to grow the nanowires at the catalyst sites. A material such as an insulator may be formed on the nanowires following nanowire growth. The insulator may be planarized using chemical-mechanical polishing or other suitable techniques. The resulting nanowire device may be used in chemical or biological sensors, as a field emitter for displays, or for other applications.
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